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Silicon carbide 2004--materials, processing, and devices symposium held April 14-15, 2004, San Francisco, California, U.S.A. by

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Published by Materials Research Society in Warrendale, Pa .
Written in English

Subjects:

  • Silicon carbide -- Congresses.,
  • Semiconductors -- Congresses.

Book details:

Edition Notes

Statementeditors: Michael Dudley ... [et al.].
GenreCongresses.
SeriesMaterials Research Society symposium proceedings ;, v. 815, Materials Research Society symposia proceedings ;, v. 815.
ContributionsDudley, Michael., Materials Research Society. Meeting
Classifications
LC ClassificationsTK7871.15.S56 S54 2004
The Physical Object
Paginationxi, 322 p. :
Number of Pages322
ID Numbers
Open LibraryOL3329111M
ISBN 101558997652
LC Control Number2004304075
OCLC/WorldCa56526179

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Silicon carbide (SiC), also known as carborundum / k ɑːr b ə ˈ r ʌ n d əm /, is a semiconductor containing silicon and occurs in nature as the extremely rare mineral tic SiC powder has been mass-produced since for use as an of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications Chemical formula: CSi. Recent Developments on Silicon Carbide Thin Films for Piezoresistive Sensors Applications. In book: Silicon Carbide - Materials, Processing and Applications in Electronic Devices, Publisher. Hunter GW, Neudeck P, Okojie R, Thomas V, Chen L, Liu CC, Ward B, and Makel D () Development of SiC Gas Sensor Systems. In: Proceeding of the State-of-the-Art Program on Compound Semiconductors XXXVI/Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III, st Meeting of The Electrochemical Society, Philadelphia, Pennsylvania, May, , F. Ren, et Cited by:   Silicon carbide is a highly desirable material for high-power electronic devices — more desirable even than silicon. And now the problem of producing large, pure wafers of .

Discover Book Depository's huge selection of Tsunenobu Kimoto books online. Free delivery worldwide on over 20 million titles. Silicon Carbide - Materials, Processing and Devices: Volume Michael Dudley. 24 Aug Hardback. unavailable. Try AbeBooks. Silicon Carbide - Materials, Processing and Devices: Volume - MRS Proceedings (Paperback) Michael Dudley £ Paperback.   Mariana Amorim Fraga, Rodrigo Sávio Pessoa, Homero Santiago Maciel and Marcos Massi (). Recent Developments on Silicon Carbide Thin Films for Piezoresistive Sensors Applications, Silicon Carbide - Materials, Processing and Applications in Electronic Devices, Dr. Moumita Mukherjee (Ed.), InTech, DOI: / Amorphous Silicon Films for Passivation of Crystalline Silicon Based Photovoltaic Devices, M.Z. Burrows, U.K. Das, R.L. Opila, R.W. Birkmire, University of Delaware The search for an ideal surface passivation layer of crystalline silicon (c-Si) to be employed in the silicon heterojunction photovoltaic device has garnered much attention.

G. Jodhani and P. "Flame Spray Pyrolysis Processing to Produce Metastable Phases of Metal Oxides," JOJ Materials Science, v.1, G. Jodhani, J. Huang, P. Gouma. "Flame Spray Synthesis and Ammonia Sensing Properties of Pure α-MoO3 Nanosheets," Journal of Nanotechnology, J.W. Faust, The etching of silicon carbide, in “Silicon Carbide a High Temperature Semiconductor” Proc. of the Conference on Silicon Carbide Boston MA April 2–3, , Eds. J.R. O’Connor and J. Smiltens, Pergamon Press, Google ScholarCited by: 5. Thin film transistors (TFTs) made of silicon nitride and silicon carbide as dielectric were submitted to N2, H2 and O2 plasma treatment of the insulator/semiconductor interface. The high temperature LGS SAW devices and experiments reported in this work show the capability of these devices to withstand prolonged exposure to temperatures ranging from to °C and to perform as high temperature gas sensors. Materials Research Society Symposium Proceedings Silicon Carbide —Materials Processing and Devices Cited by: